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TU Berlin ETHZ
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Selected Achievements (Page 1/2)

p CMOS traveling wave wideband amplifier with more than 8 dB gain up to 60 GHz and NF below 3.8 dB up to 40 GHz
p DC-20 GHz CMOS transimpedance amplifier with 2.2 mW power consumption
p CMOS ringoscillator with gate delay of 4.7 ps
p 12 Gbit/s CMOS laser drivers
p 24 Gb/s CMOS multiplexer
p Novel drain pumped transconductance CMOS mixer with zero dc power consumption covering the frequency range of 30 - 40 GHz. The applied LO power is reused to drive the device from zero dc bias into active RF operation yielding a low loss of 4.6 dB and a low SSB NF of 8 dB at 35 GHz
p 3.4 - 6.9 SiGe LNA with 10 dB gain and 9 mW power consumption for ultra wideband applications
p 5 GHz SiGe VCO with phase noise of –110 dBc at 1MHz offset and 2 mW power consumption

20 GHz CMOS Transimpedance Amplifier
with power consumption of only 2.2 mW
GHz Amplifier
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