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Electronics Lab ETH Zurich
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Urs Hammer

Research Interests

  • Process Development and Processing of InP/InGaAs(P) Double-Hetero-Bipolar-Transistors (DHBTs).
  • Design and Processing of Submicron DHBTs.
  • Design of High-Speed InP-DHBT Circuits.

Contact

E-mail hammer@ife.ee.ethz.ch
Phone +41-44-632 76 13
Fax +41-44-632 12 10
Office ETZ H81
Address     ETH Zurich
Electronics Lab
Gloriastrasse 35
CH-8092 Zurich

Publications

  • U. Hammer, J. M. Ruiz Palmero, I. Schnyder, V. Schwarz, F. Robin and H. Jäckel, Gate-delay Simulations of Scaled InP/InGaAs/InP DHBTs for +100GB/s Applications, The 27th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe (WOCSDICE), Fürigen, Switzerland, 2003 [PDF]


  • H. Jäckel, U. Hammer, J. Ruiz, I. Schnyder, V. Schwarz, M. Gaspar, D. Huber, M. Rohner and A. Huber, High Speed InP-based HBTs and OEICs, IEEE International Electron Devices Meeting (IEDM), San Francisco, 2002

Links

 
last change: 2005-02-16 ifeweb 
http://www2.ife.ee.ethz.ch/showcase/members/hammer.html
zueri.sack@ife.ee.ethz.ch